俎永熙 博士 1962年8月出生于山东省寿光县，获台湾新竹清華大學材料科學半导体材料组學士，美国伊利诺大学香槟校区- 半导体材料科学博士。
个人经历：
1991实验发明Photo-stimulated Silicon Atomic Layer Epitay
1994于美国德州仪器研发总部(Corporate R&D of Texas Instruments)共同开发世界首例4Gb DRAM High-K BST storage cell
1999遴选为美国德州仪器公司杰出资深研究人员
2003于任中芯国际半导体制造公司，获颁上海市创新发展半导体130nm铜制程开发奖
2005升任中芯国际半导体制造公司副总经理，负责全球客户工程及服务管理，创造業績3亿美金营收和支援公司15亿美金营收
2008出任中芯国际半导体制造公司研发副总经理，引进并优化IBM 45nm制程
2010创业于新竹科学园区，出任董事长兼执行长，芯传科技以绿能锂电池管理芯片产品之标竿企业为目标
2012成为清华大学百人会和兩岸企业家协会成员
2013 遴選為新竹清華大學傑出校友
2017矽力杰有限公司(TWSE:6415)購併芯传科技，出任矽力杰顧問
Up-to-date- 发表著名期刊及国际会议论文共计20篇，专利共计37件
US Patents
1.Robert Tsu, J. McPherson, W.R. McKee, and T. Bonifield, “Line-to-Line Reliability Enhancement Using a Dielectric Liner for a Low Dielectric Constant Interlevel and Intralevel Dielectric Layer”, US Patent#7,402,514 (2008).
2.Jiang; Qing-Tang, Tsu; Robert, Brennan; Kenneth D., “Copper Transition Layer for Improving Copper Interconnection Reliability”, US Patent#6,951,812 (2005).
3.Asano; Isamu, Tsu; Robert, “Method of Manufacturing a Semiconductor Integrated Circuit Device Having a Memory Cell Array and a Peripheral Circuit Region”, US Patent#6,696,337 (2004).
4.Jiang; Qing-Tang, Tsu; Robert, Brennan; Kenneth D., “Copper Transition Layer for Improving Copper Interconnection Reliability”, US Patent#6,693,356 (2004).
5.Tsu; Robert, Asano; Isamu, Iijima; Shinpei, McKee; William R., “Integrated Circuit Capacitor”, US Patent#6,653,676 (2003).
6.Cho; Chih-Chen, McKee; Jeffrey A., William R., Asano; Isamu, Tsu; Robert Y., “Integrated Circuit and Method”, US Patent#6,528,888 (2003).
7.Robert Tsu, Q.Z. Hong, and W.R. McKee, “Yield Improvement of Dual Damascene Through Oxide Filling”, US Patent#6,461,955 (2002).
8.Asano; Isamu, Tsu; Robert, “Method of Manufacturing a Semiconductor Integrated Circuit Device Including a DRAM Having Reduced Parasitic Bit Line Capacity”, US Patent#6,417,045 (2002).
9.Kulwicki; Bernard M., Tsu; Robert, “Barium Strontium Titanate (BST) Thin Films Using Boron”, US Patent#6,331,325 (2001).
10.Tsu; Robert, Asano; Isamu, Iijima; Shinpei, MaKee; William R., “Integrated Circuit Capacitor”, US Patent#6,294,420 (2001).
11.Hwang; Ming, Tsu; Robert, Hsu; Wei-Yung, “Selective Oxidation Methods for Metal Oxide Deposition on Metals in Capacitor Fabrication”, US Patent#6,207,561 (2001).
12.Robert Tsu, S. Aoyama, and S. Ando, “Method of Fabricating In-Situ Doped Rough Polycrystalline Silicon Using A Single Wafer Reactor”, US Patent#6,194,292 (2001).
13.Asano; Isamu, Tsu; Robert, “Semiconductor Integrated Circuit Device Including a DRAM Having Reduced Parasitic Bit Line Capacitance and Method of Manufacturing Same”, US Patent#6,168,985 (2001).
14.Tsu; Robert, McKee; William R., Iijima; Shimpei, Asano; Isamu, Kunitomo; Masato, “Method for Fabricating an Integrated Circuit Structure”, US Patent#6,096,597 (2000).
15.Robert Tsu, William R. McKee, and Ming Hwang, “In-Situ Doped Rough Polysilicon Storage Cell Structure Formed Using Gas Phase Nucleation”, US Patent# 6,060,354 (2000).
16. Including a DRAM Having Reduced Parasitic Bit Line Capacitance”, US Patent#6,037,207, (2000).
17.Robert Tsu, Jing Shu, Isamu Asano, and Jeff McKee, “Self-Aligned Multiple Crown Storage Capacitor and Method of Formation”, US patent #5,972,769 (1999).
18.Robert Tsu and Bernard M. Kulwicki, “Method of Making Barium Strontium Titantate (BST) Thin Films by Erbium Donor”, US patent # 5,731,220 (1998).
19.Robert Tsu and Bernard M. Kulwicki, “Barium Strontium Titantate (BST) Thin Films by Erbium Donor Doping”, US patent # 5,635,741 (1997).
20.Bernard M. Kulwicki, “Barium Strontium Titanate (BST) Think Films Using Boron”, US patent # 5,617,290 (1997).
21.Scott Summerfelt, Howard Beratan, and Robert Tsu, “ Processing Methods for High K-Dielectric Constant Materials”, US patent # 5,609,927 (1997).
22.Robert Tsu and Wei-Yung Hsu, “Sloped Storage Node for A 3-D DRAM Cell Structure”, US patent # 5,573,979 (1996).
23.Robert Tsu, Bernard Kulwicki, “Barium Strontium Titanate (BST) Thin Film by Holmium Donor”, US patent # 5,453,908 (1995).
24.Robert Tsu, “Reliability Enhancement of Aluminum Interconnects by Reacting Aluminum Leads with a Strengthening Gas”, US patent # 5,432,128 (1995).
中文专利：
1.林明为, 俎永熙, 林庆龙, 陈科宏, 李辉, 王士伟, 吴纬权, 黄炳境, “电流模式直流转换器”, 中国, 专利授权公告号: CN102761249B (2015).
2.林明为, 俎永熙, 林庆龙, 陈科宏, 李昱辉, 王士伟, 吴纬权, 黄炳境, “电流模式直流转换器及其直流转换方法”, 台湾, 专利证书号: I463778 (2014).
3.俎永熙, 林庆龙, “电池管理电路、电池模块与电池管理方法”, 台湾, 专利证书号: I415363 (2013).
4.俎永熙, 林庆龙, “电池管理电路、电池模块与电池管理方法”, 中国, 专利授权公告号: CN102377214A (2012).
5.张海洋, 俎永熙, 黄怡, 李国锋, “MOS器件的检测方法及制造方法”, 中国, 专利授权公告号: CN102024726B (2012).
6.俎永熙, 洪其中, 麦威廉, “利用氧化物填充之双金属镶嵌制造方法”, 台湾, 专利证书号: 473837 (2002).
7.浅野勇, 俎永熙, “半导体集成电路制置及其制造方法”, 台湾, 专利证书号: 406398 (2000).
8.俎永熙, 浅野勇, 饭岛晋平, 麦威廉, “形成集成电路电容器、半导体结构、记忆装置之方法及集成电路电容器与制造积体半导体记忆装置之电容器结构之方法”, 台湾, 专利证书号: 400601 (2000).
9.俎永熙, 麦威廉, 黄明彰, “粗糙多晶硅单元格及其形成方法”, 台湾, 专利证书号: 396500 (2000).
10.俎永熙, 浅野勇, 麦杰夫, 苏珍, “半导体单元格结构及其形成法与多冠储存电容器及记忆装置”, 台湾, 专利证书号: 391064 (2000).
11.俎永熙, 库伯纳, “藉铒施体掺杂之钛酸钡锶薄膜之改良”, 台湾, 专利证书号: 376562 (1999).
12.俎永熙, 库伯纳, “使用硼之钛酸钡锶薄膜之改良”, 台湾, 专利证书号: 301767 (1997).
13.俎永熙, 库伯纳, “藉钬施体掺杂之钛酸钡锶薄膜之改良”, 台湾, 专利证书号: 297148 (1997).
Publications
1. Robert Tsu, Joe McPherson, and Randy McKee, “Low-k Dielectric Reliability Issues Associated with Cu Dual Damascene Structure”, International Reliability Physics Conference Proceeding, p.384 (2000).
2. Robert Tsu, S. Aoyama, G. Chung, R. McKee, S. Iijima, S. Asano, S. Iijima, S. Asano, M. Kunitomo, S. Yamamoto, and T. Tamaru, “256Mb DRAM Storage Cell: Materials, Processes, and Integration”, Texas Instruments CR&DTC (1996).
3. R. Khamankar, B. Jiang, Robert Tsu, W.-Y. Hsu, J. Nulman, S. Summerfelt, M. Anthony, and Jack Lee, “A Novel Low-Temperature Process for High Dielectric Constant BST Thin Films for ULSI DRAM Applications”, VLSI Tech. Dig., 127 (1995).
4. W.-Y. Hsu, J.D. Luttmer, Robert Tsu, S. Summerfelt, M. Bedekar, T. Tokumoto, and J. Nulman, Appl. Phys. Lett. 66, 2975 (1995).
5. Yukio Fukuda, Katsuhiro Aoki, Shintaro Aoyama, Akitoshi Nishimura, Scott Summerfelt, and Robert Tsu, “Effects of Interfacial Roughness on the Leakage Properties of SrTiO3 Thin Film Capacitors”, Integrated Ferroelectrics, Vol. 11, pp.121-127 (1995).
6. G. Li, Y.-C. Chang, Robert Tsu, and Joe Greene, “Electronic Structure of the Si(001)2x1:H Surface and Pathway for H2 Desorption”, Surface Science 330, 20 (1995).
7. Robert Tsu, Hung-Yu Liu, Wei-Yung Hsu, Scott Summerfelt, Katsuhiro Aoki, and Bruce Gnade, “ Correlations of Ba1-xSrxTi3 Materials and Dielectric Properties”, Proceeding of Ferroelectric Thin Film IV, eds. S.B. Desu, B.A. Tuttle, R. Ramesh, and T. Shiosaki, vol. 361, 275 (1995).
8. Y. Wu, E.G. Jacobs, R.F. Pinzzotto, Robert Tsu, H.Y. Liu, S. Summerfelt, and B. Gnade, “Microstructural and Electrical Characterization of BST Thin Films”, Proceeding of Ferroelectric Thin Film IV, eds. S.B. Desu, B.A. Tuttle, R. Ramesh, and T. Shiosaki, vol. 361, 269 (1995).
9. Robert Tsu, M.-A. Hasen, and J.E. Greene, “Surface Segregation, Roughening, and Growth Mode Transitions During Si Growth on Ge(001)2x1 by Gas-Source Molecular Beam Epitaxy from Si2H6”, J. Appl. Phys. 75(1), 240 (1994).
10. J. Chapple-Sokol, S. Barbee, D. Kotecki, S. Bilodeau, P. Van Buskirk, P. Kirlin, S. Summerfelt, B. Gnade, and Robert Tsu, 6th Integrated Ferroelectrics (1994).
11. Robert Tsu, D.-S. Lin, D. Lubben, T.R. Bramblett, T.C. Chiang, and J.E. Greene, “Adsorption and Dissociation of Si2H6 on Ge(001)2x1”, Surf. Sci. 280, 265 (1993).
12. Robert Tsu, D. Lubben, T.R. Bramblett, and J.E. Greene, “ Si2H6 Adsorption and Dissociation Pathways on Ge(001)2x1: Mechanisms for Heterogeneous Atomic Layer Epitaxy”, Thin Solid Films 225, 191 (1993).
13. Robert Tsu, D.-S. Lin, J.E. Greene, and T.-C. Chiang, “ Ge Segregation and Surface Roughening During Si Growth on Ge(001)2x1 by Gas-Source Molecular Beam Epitaxy from Si2H6”, Mater. Res. Soc. Symp. Proc. 280, 281 (1993).
14. X.J. Zhang, G. Xue, A. Agarwal, Robert Tsu, M.-A. Hason, J.E. Greene, and A. Rockett, “Thermal Desorption of UV-Ozone Oxidized Ge(001)2x1 for Substrate Cleaning”, J. Vac. Sci. Technol. A11, 2553 (1993).
15. H.Z. Xiao, Robert Tsu, I.M. Robertson, H.K. Birnbaum, and J.E. Greene, “Growth of Si on Ge(001)2x1 by Gas-Source Molecular Beam Epitaxy”, Proc. 52th Annual Meeting of the Microscopy Society of America, ed. By G.W. Railey and C.L. Rieder, P.149 (1993).
16. D.-S. Lin, T. Miller, T.-C. Chiang, Robert Tsu, and J.E. Greene, “Thermal Reactions of Disilane on Si(100) Studied by Synchrotron-Radiation Photoemission”, Phys. Rev. B 48, 11846 (1993).
17. D.-S. Lin, E.S. Hirschorn, T.-C. Chiang, Robert Tsu, D. Lubben, and J.E. Greene, “Scanning-Tunneling-Microscopy Studies of Disilane Adsorption and Pyrolytic Growth on Si(100)2x1”, Phys. Rev. B45, 3494 (1992).
18. Robert Tsu, D. Lubben, T.R. Bramblett, and J.E. Greene, “ Mechanisms of Excimer Laser Cleaning of Air-Exposed Si(100) Surfaces Studied by Auger Electron Spectroscopy, Electron Energy-Loss Spectroscopy, Reflection High Energy Electron Diffraction, and Secondary-Ion Mass Spectrometry”, J. Vac. Sci. Technol. A9(6), 3003 (1991).
19. D. Lubben, Robert Tsu, T.R. Bramblett, and J.E. Greene, “Mechanisms and Kinetics of Si Atomic-Layer Epitaxy on Si(001)2x1 from Si2H6”, J. Vac. Sci. Technol. A9(6), 3003, (1991).
20. D. Lubben, Robert Tsu, T.R. Bramblett, and J.E. Greene, “UV Photostimulated Si Atomic-Layer Epitaxy”, Mater. Res. Soc. Symp. Prod. 222, 177 (1991).
